WebInfineon IRHMB6S7260 Datasheet. 200V 100kRad Single N-Channel TID Hardened MOSFET in a TO-254AA Tabless package, TO-254AA-3 Low Ohmic. View Part Info. Download. IRHMB6S7260 Pre-Irradiation Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter Up to 300 kRads(Si) 1 Units Test Conditions Min. Max. BVDSS Drain-to-Source Breakdown Voltage 200 ––– V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 1.0mA
IR – Radiation Hardened Power MOSFETs - KAMAKA
WebDetails on Michigan HB 6460 (Michigan 2024-2024 Regular Session) - Individual income tax: withholding requirements; withholding requirements on disbursements of pension or … WebRad-Hard and Hermetic MOSFETs IR offers a broad selection of Rad-Hard and hermetic MOSFETs in a wide range of packaging options screened to MIL-PRF-19500 and available as QPLs. Explore Our Ground-breaking Technologies Hermetic MOSFETs cube 3x3 shop in mandalay
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WebIRHMB6S7260 - MOSFET from Infineon Technologies. Get product specifications, Download the Datasheet, Request a Quote and get pricing for IRHMB6S7260 on everything PE … WebIRHMB6S7260 im Tabless_TO-254AA Gehäuse. IRHMS6S7260 im Low-Ohmic_TO-254AA Gehäuse. IRHMS6S7264 im Low-Ohmic_TO-254AA Gehäuse. IRHNA6S7260 im SMD-2 Gehäuse. IRHNJ6S7130 im SMD-0.5 Gehäuse. IRHNJ6S7230 im SMD-0.5 Gehäuse. IRHYS6S7130CM im Low Ohmic – TO-257AA Gehäuse. IRHYS6S7230CM im Low Ohmic … WebThese devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Different Packages: IRHF6S7230 inTO-39 Package IRHMB6S7260 in Tabless_TO-254AA Package IRHMS6S7260 in Low-Ohmic_TO-254AA Package east chattanooga lumber chattanooga